Distortion Analysis Using Volterra Series and Linearization Technique of Nano-Scale Bulk-Driven CMOS RF Amplifier

被引：14
作者：
Yu, Haoran [1 ]
El-Sankary, Kamal [1 ]
El-Masry, Ezz I. [1 ]
机构：
[1] Dalhousie Univ, Microelect & VLSI Res Lab, Halifax, NS B3H 4R2, Canada
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2015年 / 62卷 / 01期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Amplifier; bulk-driven; HD; HP3; IM; linearization; nonlinearity; volterra series; SIGNAL-INJECTION METHOD; MIXER;
D O I：
10.1109/TCSI.2014.2341116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The distortion analysis of nano-scale bulk-driven (BD) CMOS RF amplifier is presented based on Volterra series. The first three-order Volterra kernels are computed; and the closed-form expressions of the second-order and third-order harmonic distortion (HD) are derived. These expressions give good accuracy comparing with the simulation results, and can provide insight into the nonlinearity of nano-scale BD amplifier. These expressions unveil and demonstrate that the nano-scale BD MOSFET has distinct nonlinear characteristics. Also, distortion-aware design guidelines for nano-meter CMOS BD amplifier are provided. A modified second-order intermodulation (IM2) injection technique is presented to suppress the third-order intermodulation (IM3) product. This modified technique which consumes only 64 mu A current employs phase adjustment of the low-frequency IM2; and up to 20 dB IM3 reduction is achieved over 1 MHz-20 MHz two-tone spacing range without gain reduction or noise penalty.
引用
收藏
页码：19 / 28
页数：10
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