Theoretical investigation of a single erbium center in hexagonal gallium nitride

被引：14

作者：

Maalej, Ramzi ^{[1
]}

Dammak, M. ^{[1
]}

Kammoun, S. ^{[1
]}

Kammoun, M. ^{[1
]}

机构：

[1] Fac Sci Sfax, Dept Phys, Theoret Phys Grp, Appl Phys Lab, Sfax 3018, Tunisia

来源：

JOURNAL OF LUMINESCENCE | 2007年 / 126卷 / 02期

关键词：

GaN; erbium; photoluminescence; crystal-field;

D O I：

10.1016/j.jlumin.2006.10.029

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A theoretical energy-level analysis was based on parametric Hamiltonian for the 4f(11) electronic configuration of Er3+ ions in C-3v center, and it permitted a phenomenological characterization of crystal-field (CF) Hamiltonian parameters. This characterization allowed us to calculate the energy of the missing stark levels of the I-4(15/2) and I-4(13/2) states and to confirm the presence of a single emission center with C-3v symmetry. The calculated CF and strength parameters are compared with those obtained for Sm3+, Pr3+ and Yb3+ ions in the same host and with Er3+ in other isostructural hosts. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：695 / 701

页数：7

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