Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous In-O films

被引：80

作者：

Gantmakher, VF ^{[1
]}

Golubkov, MV ^{[1
]}

Dolgopolov, VT ^{[1
]}

Tsydynzhapov, GE ^{[1
]}

Shashkin, AA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 1998年 / 68卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.567874

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The field-induced superconductivity-destroying quantum transition in amorphous indium oxide films are investigated at low temperatures down to 30 mK. It is found that, on the high-field side of the transition, the magnetoresistance reaches a maximum and the phase can be insulating as well as metallic. With further increase of the magnetic field the resistance of the film drops and in the high-field limit approaches the resistance value at the transition point, so that at high fields the metallic phase occurs for both cases. We give a qualitative account of this behavior in terms of field-induced destruction of localized electron (C) 1998 American Institute of Physics. pairs. [S0021-3640(98)01716-2].

引用

页码：363 / 369

页数：7

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