Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography

被引：4

作者：

Lo, Jen-Iu ^{[1
]}

Peng, Yu -Chain ^{[1
]}

Lu, Hsiao-Chi ^{[1
]}

Tseng, Ton-Rong ^{[2
]}

Cheng, Bing -Ming ^{[1
,3
]}

机构：

[1] Hualien Tzu Chi Hosp, Buddhist Tzu Chi Med Fdn, Dept Med Res, Hualien 970, Taiwan

[2] Mastek Technol Inc, New Taipei City 24892, Taiwan

[3] Tzu Chi Univ Sci & Technol, Hualien 970, Taiwan

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 07期

关键词：

extreme-ultraviolet lithography; extreme-ultraviolet radiation; Mo/Si multilayer mirror; photoluminescence; temperature sensor; DIAMOND; DEFECTS;

D O I：

10.1021/acsaelm.2c00347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extreme-ultraviolet lithography uses a Mo/Si multilayer mirror as an optical unit to produce nanochips in a semiconductor fabrication plant. The Mo/Si multilayer mirror radiates an intense photoluminescence in the wavelength region 200-420 nm upon excitation with light at 13.5 nm. The emissions of the Mo/Si multilayer mirror depend noticeably on its operational temperature; we thus suggest to apply this property to directly monitor the temperature of a Mo/Si multilayer mirror in extreme-ultraviolet lithography. This scheme to monitor the temperature of a mirror can trace the real-time temperature due to the intrinsic property of photoluminescence.

引用

页码：3435 / 3439

页数：5

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