Phosphorus-doped ZnO films grown nitrogen ambience by magnetron sputtering on sapphire substrates

被引：12

作者：

Ahn, Cheol Hyoun ^{[1
]}

Kim, Young Yi ^{[1
]}

Kang, Si Woo ^{[1
]}

Cho, Hyung Koun ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷 / 370-373期

关键词：

p-type ZnO; sputtering; phosphorus;

D O I：

10.1016/j.physb.2007.08.190

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We grew phosphorus-doped ZnO films at various temperatures on a sapphire substrate by magnetron sputtering to obtain a p-type ZnO film. The ZnO film grown under the ambient gas mixture of nitrogen and argon showed p-type behavior at a higher growth temperature. The electron concentration and mobility of the as-deposited p-type ZnO were 1.2 x 10(17)cm(-3) and 25 cm(2)/V s, respectively. The peak shift of X-ray diffraction and the strong acceptor-bound exciton peak of photoluminescence indicated that the incorporation of phosphorus was enhanced with increasing growth temperature. (c) 2007 Published by Elsevier B.V.

引用

页码：370 / 373

页数：4

共 22 条

[1] Infrared optical properties of MgxZn1-xO thin films (0 ≤ x ≤ 1):: Long-wavelength optical phonons and dielectric constants [J].

Bundesmann, C. ;

Rahm, A. ;

Lorenz, M. ;

Grundmann, M. ;

Schubert, M. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

[2] Mechanism for radiative recombination in ZnCdO alloys [J].

Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden ;

不详 ;

不详 .

Appl Phys Lett, 2007, 26

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J].

Djurisic, AB ;

Leung, YH ;

Tam, KH ;

Ding, L ;

Ge, WK ;

Chen, HY ;

Gwo, S .

APPLIED PHYSICS LETTERS, 2006, 88 (10)

[5] Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy -: art. no. 213103 [J].

Du, GT ;

Ma, Y ;

Zhang, YT ;

Yang, TP .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

[6] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes [J].

Hirayama, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[7] Properties of p-type and n-type ZnO influenced by P concentration [J].

Hu, Guangxia ;

Gong, Hao ;

Chor, E. F. ;

Wu, Ping .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[8] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[9] Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient [J].

Jeong, SH ;

Kim, BS ;

Lee, BT .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2625-2627

[10] Investigation on the p-type formation mechanism of arsenic doped p-type ZnO thin film [J].

Kang, Hong Seong ;

Kim, Gun Hee ;

Kim, Dong Lim ;

Chang, Hyun Woo ;

Du Ahn, Byung ;

Lee, Sang Yeol .

APPLIED PHYSICS LETTERS, 2006, 89 (18)

← 1 2 3 →