Phosphorus-doped ZnO films grown nitrogen ambience by magnetron sputtering on sapphire substrates

We grew phosphorus-doped ZnO films at various temperatures on a sapphire substrate by magnetron sputtering to obtain a p-type ZnO film. The ZnO film grown under the ambient gas mixture of nitrogen and argon showed p-type behavior at a higher growth temperature. The electron concentration and mobility of the as-deposited p-type ZnO were 1.2 x 10(17)cm(-3) and 25 cm(2)/V s, respectively. The peak shift of X-ray diffraction and the strong acceptor-bound exciton peak of photoluminescence indicated that the incorporation of phosphorus was enhanced with increasing growth temperature. (c) 2007 Published by Elsevier B.V.