Dielectric relaxation behaviour of Bi:SrTiO3:: I.: The low temperature permittivity peak

被引：54

作者：

Zhi, Y

Chen, A ^{[1
]}

Vilarinho, PM

Mantas, PQ

Baptista, JL

机构：

[1] Univ Aveiro, Dept Ceram & Glass Engn, P-3800 Aveiro, Portugal

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1998年 / 18卷 / 11期

关键词：

D O I：

10.1016/S0955-2219(98)00027-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dielectric properties of (Sr1-1.5xBix)TiO3 (0.002 less than or equal to x less than or equal to 0.167) ceramics were systematically studied. The temperature dependence of the complex-permittivity was measured irt the temperature range of 10-300 K. Permittivity peaks with obvious frequency dispersion were observed and with the increase of the Bi content, the temperature of the permittivity maximum of each one is shifted to higher temperatures. In the high temperature side of the permittivity peaks, notable departure from the Curie-Weiss law was observed. The relaxation behaviour is characterised in the present paper. The effect of Bi on the dielectric relaxation behaviour and the physical mechanism giving polarisation are briefly discussed. (C) 1998 Elsevier Science Limited. AII rights reserved.

引用

页码：1613 / 1619

页数：7

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