Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

被引：88

作者：

Noh, Joo Hyon ^{[1
,2
]}

Ryu, Seung Yoon ^{[2
]}

Jo, Sung Jin ^{[2
]}

Kim, Chang Su ^{[2
]}

Sohn, Sung-Woo ^{[2
]}

Rack, Philip D. ^{[1
,3
]}

Kim, Dong-Joo ^{[4
]}

Baik, Hong Koo ^{[2
]}

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Auburn Univ, Auburn, AL 36849 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期

基金：

美国国家科学基金会;

关键词：

Indium oxide; thin films; thin-film transistors (TFTs); ELECTRICAL-PROPERTIES; PERFORMANCE;

D O I：

10.1109/LED.2010.2046133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors (TFTs) were fabricated using an indium oxide (In2O3) thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 48-8 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In2O3 TFTs had a field-effect mobility of 15.3 cm(2) . V-1 . s(-1), a threshold voltage of 3.1 V, an ON-OFF current ratio of 2.2 x 10(8), a subthreshold gate voltage swing of 0.25 V . decade(-1), and, most importantly, a normally OFF characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

引用

页码：567 / 569

页数：3

共 17 条

[1] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[2] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[3] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[4] Realization of In2O3 thin film transistors through reactive evaporation process [J].

Dhananjay ;

Chu, Chih-Wei .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[5] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[6] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[7] GENERATION OF ELECTRON CARRIERS IN INSULATING THIN-FILM OF MGIN2O4 SPINEL BY LI+ IMPLANTATION [J].

KAWAZOE, H ;

UEDA, N ;

UNNO, H ;

OMATA, T ;

HOSONO, H ;

TANOUE, H .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) :7935-7941

[8] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[9] Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor [J].

Nomura, K ;

Ohta, H ;

Ueda, K ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

SCIENCE, 2003, 300 (5623) :1269-1272

[10] Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O:: Experiment and ab initio calculations [J].

Nomura, Kenji ;

Kamiya, Toshio ;

Ohta, Hiromichi ;

Uruga, Tomoya ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICAL REVIEW B, 2007, 75 (03)

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