Structural, morphological, electrical and optical properties of Cu doped DLC thin films

被引：18

作者：

Khan, M., I ^{[1
]}

Adil, F. ^{[1
]}

Majeed, Shahbaz ^{[2
]}

Farooq, W. A. ^{[3
]}

Hasan, M. S. ^{[1
]}

Jabeen, Raheela ^{[4
]}

Al-Mutairi, Mona A. ^{[3
]}

Bukhtiar, Arfan ^{[5
]}

Iqbal, Munawar ^{[6
]}

机构：

[1] Univ Lahore, Dept Phys, Lahore 53700, Pakistan

[2] UET, Dept Phys, Laser & Optron Ctr, Lahore 54890, Pakistan

[3] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia

[4] Women Univ Multan, Dept Biochem & Biotechnol, Multan, Pakistan

[5] Univ Punjab, Ctr Excellence Solid State Phys, Lahore, Pakistan

[6] Univ Lahore, Dept Chem, Lahore 53700, Pakistan

来源：

MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 12期

关键词：

DLC; Cu; thin films; electrical; optical properties; COPPER;

D O I：

10.1088/2053-1591/ab58d5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this research, effect of copper (Cu) doping on the structural, optical, morphological and electrical characteristics of diamond like carbon (DLC) thin films have been investigated. Thin films of DLC and Cu doped DLC (Cu-DLC) have been deposited on glass substrates by pulsed Laser Deposition (PLD) technique. XRD results showed that at 1.5% of Cu doping, Cu form cluster in DLC. Below of this doping ratio, Cu has amorphous form in DLC. AFM reveals that the minimum surface roughness was observed for the 1.0% DLC thin film with the root mean square surface roughness (R-rms) of 2.07. The R-rms values for the 1.5%, 2.0% and 2.5% Cu-DLC thin films are 2.45, 3.14 and 3.89 respectively. The average sheet resistivity of films is decreased by increasing the Cu concentration, according to Four Point Probe technique.

引用

页数：7

共 33 条

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