Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer

被引：22

作者：

Lee, Hyung Dong ^{[1
]}

Nishi, Yoshio ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 25期

关键词：

THIN-FILMS; MEMORY; NANOFILAMENTS; DIFFUSION; OXIDE;

D O I：

10.1063/1.3528211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of interface between electrode and NiO on switching characteristics has been investigated for unipolar NiO-based resistive switching. The ten time reduction of reset current could be achieved relative to a few milliamperes in many literatures by inserting a thin nickel interfacial layer between cathodic electrode and NiO. A model describing the reduction of reset current mechanism was derived from the combination effect of oxygen vacancy formation/migration and the interfacial oxide layer at cathodic electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3528211]

引用

页数：3

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