A low-voltage low-power CMOS fully differential linear transconductor with mobility reduction compensation

被引：8
作者：
Farouk, Tamer [1 ]
Mohieldin, Ahmed Nader [1 ]
Khalil, Ahmed Hussien [1 ]
机构：
[1] Cairo Univ, Dept Elect Engn, Giza 12613, Egypt
来源：
MICROELECTRONICS JOURNAL | 2012年 / 43卷 / 01期
关键词：
Transconductor; Low-voltage; Low-power; Nonlinearity; Gm-C filters; Common-mode feedback (CMFB); Fully differential; CMOS;
D O I：
10.1016/j.mejo.2011.11.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly linear fully differential CMOS transconductor architecture based on flipped voltage follower (FVF) is proposed. The linearity of the proposed architecture is improved by mobility reduction compensation technique. The simulated total harmonic distortion (THD) of the proposed transconductor with 0.4V(pp) differential input is improved from -42 dB to -55 dB while operating from 1.0 V supply. As an example of the applications of the proposed transconductor, a 4th-order 5 MHz Butterworth Gm-C filter is presented. The filter has been designed and simulated in UMC 130 nm CMOS process. It achieves THD of -53 dB for 0.4V(pp) differential input. It consumes 345 mu w from 1.0 V single supply. Theoretical and simulated results are in good agreement. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：69 / 76
页数：8
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