Fabrication, characterization, and kinetic study of vertical single-crystalline CuO nanowires on Si substrates

被引:62
作者
Cheng, Shao-Liang [1 ]
Chen, Ming-Feng [1 ]
机构
[1] Natl Cent Univ, Dept Chem & Mat Engn, Chung Li City 32001, Taoyuan County, Taiwan
来源
NANOSCALE RESEARCH LETTERS | 2012年 / 7卷
关键词
Cu film; thermal oxidation; CuO nanowire; growth kinetic; resistance; THERMAL-OXIDATION; GROWTH; COPPER; NANORODS; SENSORS; ARRAYS; ROUTE; OXIDE; AIR;
D O I
10.1186/1556-276X-7-119
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report here on the first study of the growth kinetics of high-yield, vertical CuO nanowires on silicon substrates produced by the process of thermal oxidation. The length of the CuO nanowires could be tuned from several to tens of micrometers by adjusting the oxidation temperature and time. The grown CuO nanowires were determined to be single-crystalline with different axial crystallographic orientations. After a series of scanning electron microscopy examinations, the average length of CuO nanowires produced at each temperature was found to follow a parabolic relationship with the oxidation time. The parabolic growth rate at different oxidation temperatures was measured. The activation energy for the growth of CuO nanowires calculated from an Arrhenius plot was found to be about 174.2 kJ/mole. In addition, the current-voltage characterization indicated that the sample with high-density CuO nanowires exhibited ohmic behavior, and its resistance was found to significantly decrease with increasing environmental temperature. The result can be attributed to an increase in the number of carriers at higher temperatures.
引用
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页数:7
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