Effect of Mn doping on the temperature-dependent anomalous giant dielectric behavior of CaCu3Ti4O12

被引:54
作者
Kim, C. H. [2 ]
Jang, Y. H. [2 ]
Seo, S. J. [1 ]
Song, C. H. [3 ]
Son, J. Y. [4 ]
Yang, Y. S. [5 ]
Cho, J. H. [1 ]
机构
[1] Pusan Natl Univ, Dept Phys Educ, RCDAMP, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Phys, RCDAMP, Pusan 609735, South Korea
[3] JASRI SPring 8, Sayo, Hyogo 6795198, Japan
[4] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Suwon 446701, South Korea
[5] Pusan Natl Univ, Dept Nano Fus Technol, Pusan 609735, South Korea
基金
新加坡国家研究基金会;
关键词
CONSTANT; CERAMICS; MODELS; ORIGIN;
D O I
10.1103/PhysRevB.85.245210
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report dielectric properties and dielectric relaxation behaviors of Mn-substituted CaCu3Ti4O12 (CCTO) on Cu sites. While CCTO exhibits the giant dielectric constant and low dielectric loss in a wide temperature range, drastic suppression of the dielectric constant in Mn-doped CCTO (CCMTO) samples have been observed in temperature and frequency dependencies of dielectric properties with two possible origins as Mn doping increases. The observed suppression of dielectric response in the low Mn doping differs from the heavy doping of Mn in CCMTO samples. The low-Mn-doped CCMTO samples (x = 0.01 and 0.02) show that the relaxation time and the activation energy E-a were slightly reduced due to a decreased contribution from the density of the dipolar effect. However, in heavily doped CCMTO samples (x = 0.03, 0.04, and 0.05), the dielectric response, relaxation time, and E-a were significantly decreased, suggesting Mn doping plays a significant role in the destruction of the intrinsic dipolar effect.
引用
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页数:6
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