Magnetism in Transition metal doped Cubic SiC

被引：3

作者：

Patnaik, Padmaja ^{[1
]}

Mukhopadhyay, Gautam ^{[1
]}

Singh, Prabhakar P. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

来源：

SOLID STATE PHYSICS: PROCEEDINGS OF THE 55TH DAE SOLID STATE PHYSICS SYMPOSIUM 2010, PTS A AND B | 2011年 / 1349卷

关键词：

Cubic SiC; transition metal; magnetic moment; SILICON-CARBIDE; ELECTRONIC-STRUCTURE; IMPURITIES;

D O I：

10.1063/1.3606240

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report here our study on SiC doped with transition metals using first principle density functional theory calculations. We have considered cubic SiC with 3d transition metals as substitutional impurities for Si and C site separately. Cubic SiC doped with Cr, Mn, show ferromagnetism whereas with Sc, Ti, V and Co show site dependency of magnetic properties. Rests of the impurities are found to be non-magnetic.

引用

页码：1087 / 1088

页数：2

共 11 条

[1] First-principles studies of Ti impurities in SiC [J].

Barbosa, KO ;

Machado, WVM ;

Assali, LVC .

PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) :726-729

[2]

HASS KC, 1991, SEMIMAGNETIC SEMICON

[3] Deep level centers in silicon carbide: A review [J].

Lebedev, AA .

SEMICONDUCTORS, 1999, 33 (02) :107-130

[4] Electronic structure of cubic silicon carbide with substitutional 3d impurities at Si and C sites [J].

Medvedeva, NI ;

Yur'eva, EI ;

Ivanovskii, AL .

SEMICONDUCTORS, 2003, 37 (11) :1243-1246

[5] Electronic structure and magnetic properties of transition-metal-doped 3C and 4H silicon carbide [J].

Miao, M. S. ;

Lambrecht, Walter R. L. .

PHYSICAL REVIEW B, 2006, 74 (23)

[6] Magnetic properties of substitutional 3d transition metal impurities in silicon carbide -: art. no. 125204 [J].

Miao, MS ;

Lambrecht, WRL .

PHYSICAL REVIEW B, 2003, 68 (12)

[7]

Muller S. T. G., 1995, SILICON CARBIDE RELA

[8]

Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865

[9] Device physics - Magnetoelectronics [J].

Prinz, GA .

SCIENCE, 1998, 282 (5394) :1660-1663

[10] The electronic structure and magnetic properties of transition metal-doped silicon carbide [J].

Shaposhnikov, VL ;

Sobolev, NA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (10) :1761-1768

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