Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer

被引：5

作者：

Chang, YA ^{[1
]}

Luo, CY

Ku, HC

Kuo, YK

Lin, CF

Wang, SC

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 250, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 11期

关键词：

semiconductor lasers; quaternary InAlGaN alloys; numerical simulation; electronic blocking layer; leakage current;

D O I：

10.1143/JJAP.44.7916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T-0) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased To value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T-0 value is mainly attributed to the increase in electronic leakage current.

引用

页码：7916 / 7918

页数：3