Dislocation morphology and nucleation within compressed Si nanospheres: A molecular dynamics study

被引:24
|
作者
Hale, L. M. [1 ]
Zhang, D. -B. [2 ]
Zhou, X. [1 ]
Zimmerman, J. A. [1 ]
Moody, N. R. [3 ]
Dumitrica, T. [2 ,4 ]
Ballarini, R. [5 ]
Gerberich, W. W. [4 ]
机构
[1] Sandia Natl Labs, Dept Mech Mat, Livermore, CA 94550 USA
[2] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
[3] Sandia Natl Labs, Dept Hydrogen & Met Sci, Livermore, CA 94550 USA
[4] Univ Minnesota, Dept Mat Sci, Minneapolis, MN 55455 USA
[5] Univ Minnesota, Dept Civil Engn, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
Silicon; Nanoparticle; Dislocation; Molecular dynamics; SILICON NANOSPHERES; POTENTIALS; ENERGY; SIMULATION;
D O I
10.1016/j.commatsci.2011.11.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large scale molecular dynamics simulations of the compression of silicon nanospheres were performed with the Stillinger-Weber potential. Several defects were observed to cause the yielding, including dislocations, stacking faults and phase transformations. To better investigate dislocation interactions, spheres of increasing size comprised of up to one million atoms were simulated. The morphologies of the defects and the conditions under which they are formed are explored. A new and interesting route to dislocation formation is identified and examined in which perfect dislocations form on {1 1 0} planes as opposed to the expected {1 1 1} planes. The dislocations on {1 1 0} planes are observed to form through a pathway with an intermediate metastable state corresponding to a change in the atomic bonding. Density Functional based Tight Binding calculations reveal the feasibility of this pathway although the appearance of dislocations on the {1 1 0} plane in the molecular dynamics simulations is specific to the Stillinger-Weber potential. {C} 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:280 / 286
页数:7
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