Hydrophobic coatings using atomic layer deposition and non-chlorinated precursors

被引：5

作者：

Herrmann, CF ^{[1
]}

DelRio, FW ^{[1
]}

Bright, VM ^{[1
]}

George, SM ^{[1
]}

机构：

[1] Univ Colorado, Dept Chem, NSF Ctr Adv Mfg & Packaging Microwave Opt & Digit, Boulder, CO 80309 USA

来源：

MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/MEMS.2004.1290669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an alternative method of depositing hydrophobic coatings on MEMS-devices using atomic layer deposition (ALD) and non-chlorinated hydrophobic precursors. First, a thin film of Al2O3 is deposited via ALD and is used as a seed layer to prepare and optimize the MEMS surface for the attachment of the hydrophobic precursors. Subsequently, non-chlorinated alkylsilanes are chemically bonded to the surface hydroxyl groups on the ALD seed layer. This technique results in a dense and ordered hydrophobic film with a water contact angle of 108 +/- 2degrees. Using MEMS cantilever beam arrays, hydrophobic ALD coated beams were determined to have an adhesion energy of 0.11 +/- 0.03 mJ/m(2) at 100% humidity as compared to the same beams without coating of 12 +/- 1 mJ/m(2).

引用

页码：653 / 656

页数：4

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