Silicon carbide JFET resonant inverter for induction heating home appliances

被引：0

作者：

Molina Gaudo, Pilar ^{[1
]}

Bernal, Carlos ^{[1
]}

Otin, Aranzazu ^{[1
]}

Miguel Burdio, Jose ^{[1
]}

机构：

[1] Univ Zaragoza, Grp Power Elect & Microelect GEPM, Inst Invest Ingn Aragon I3A, E-50009 Zaragoza, Spain

来源：

IECON 2011: 37TH ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS SOCIETY | 2011年

关键词：

Silicon carbide (SiC); JFET; resonant inverter; zero voltage switching; induction heating;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents a one switch silicon carbide JFET normally-ON resonant inverter applied to induction heating for consumer home cookers. The promising characteristics of silicon carbide (SiC) devices need to be verified in practical applications; therefore, the objective of this work is to compare Si IGBTs and normally-ON commercially available JFET in similar operating conditions, with two similar boards. The paper describes the gate circuit implemented, the design of the basic converter in ideal operation, namely Zero Voltage Switching (ZVS) and Zero Derivative Voltage Switching (ZVDS), as well as some preliminary comparative results for 700W and 2 kW output power delivered to an induction heating coil and load.

引用

页码：2551 / 2556

页数：6

共 17 条

[1] DOMESTIC INDUCTION APPLIANCES
Acero, J.
Burdio, J. M.
Barragan, L. A.
Navarro, D.
Alonso, R.
Garcia, J. R.
Monterde, F.
Hernandez, P.
Llorente, S.
Garde, I.
[J]. IEEE INDUSTRY APPLICATIONS MAGAZINE, 2010, 16 (02) : 39 - 47
[2] [Anonymous], 2009, P 13 EUR C POW EL AP
[3] Biela J., IND ELECT I IN PRESS, V99
[4] Franke W.T., 2009, Power Electronics and Applications, P1
[5] Hui Zhang, 2009, 2009 4th IEEE Conference on Industrial Electronics and Applications, P2056, DOI 10.1109/ICIEA.2009.5138563
[6] IXYS RF, 2011, DEIC515 MOSF3ET IC D
[7] EXACT ANALYSIS OF CLASS-E TUNED POWER-AMPLIFIER WITH ONLY ONE INDUCTOR AND ONE CAPACITOR IN LOAD NETWORK
KAZIMIERCZUK, M
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (02) : 214 - 221
[8] Kelley R, 2006, 21 ANN IEEE APPL POW, p[4, 19]
[9] Kitabatake M., 2010, 2010 International Power Electronics Conference (IPEC - Sapporo), P3249, DOI 10.1109/IPEC.2010.5543620
[10] Llorente S, 2002, APPL POWER ELECT CO, P1168, DOI 10.1109/APEC.2002.989392

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