Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics

被引：13

作者：

Yang, Guanhua ^{[1
,2
,3
]}

Chuai, Xichen ^{[1
,2
,3
]}

Niu, Jiebin ^{[1
,2
,3
]}

Wang, Jiawei ^{[1
,2
,3
]}

Shi, Xuewen ^{[1
,2
,3
]}

Wu, Quantan ^{[1
,2
,3
]}

Su, Yue ^{[1
,2
,3
]}

Zhao, Ying ^{[1
,2
,3
]}

Liu, Dongyang ^{[1
,2
,3
]}

Xu, Guangwei ^{[1
,2
,3
]}

Lu, Congyan ^{[1
,2
,3
]}

Geng, Di ^{[1
,2
,3
]}

Lu, Nianduan ^{[1
,2
,3
]}

Li, Ling ^{[1
,2
,3
]}

Liu, Ming ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Jiangsu Natl Synerget Innovat Ctr Adv Mat, Nanjing 210009, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期

基金：

中国国家自然科学基金;

关键词：

MoS2; Transistor; anomalous positive bias stress instability; RELIABILITY;

D O I：

10.1109/LED.2018.2886423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, in this letter, the anomalous positive bias stress instability of the back gated monolayer polycrystal molybdenum disulfide (MoS2) field-effect transistors with high-hydrogen-concentration SiO2 gate dielectrics is reported. It is found that the threshold voltage shifts exhibit a pronounced turnaround behavior from a positive shift to a negative shift when enlarging the stress voltage and stress time. We relate this anomalous positive bias instability to two physical processes, charge trapping and hydrogen release and migration.

引用

收藏

页码：232 / 235

页数：4

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