Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

被引：7
作者：
Vura, Sandeep [1 ]
Rai, Rajeev Kumar [1 ]
Nukala, Pavan [1 ]
Raghavan, Srinivasan [1 ]
机构：
[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India
来源：
THIN SOLID FILMS | 2022年 / 758卷
关键词：
Epitaxy; Reactive pulsed laser deposition; Oxides; Silicon substrate; Ferroelectric; X-ray diffraction; Surface morphology; METAL-INSULATOR-TRANSITION; ENERGY ION-IRRADIATION; THIN-FILMS; BATIO3; FILMS; DIFFUSION BARRIER; SPUTTERED TIN; GROWTH; ABLATION; SURFACE; MGO;
D O I：
10.1016/j.tsf.2022.139456
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial TiN films on (100) Si have been realized by reactive pulsed laser deposition (PLD). Their utility is demonstrated by subsequent growth of epitaxial BaTiO3. PLD geometry optimization has yielded TiN films with a low particulate density, -6 x 10(3) cm-2, but with a growth rate,-1 mu m/hr, comparable to the standard On-axis geometry. The method of heat up to growth temperatures yields oxide free epitaxial interface, (001)TiN ||(001)Si and 100 100 100 100 100 Si, is demonstrated with switchable out of plane polarization.
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页数：12
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