Plasma ash processing solutions for advanced interconnect technology

被引：8

作者：

Fuller, N. C. M. ^{[1
]}

Worsley, M. A. ^{[2
]}

Tai, L. ^{[3
]}

Bent, S. ^{[4
]}

Labelle, C. ^{[5
]}

Arnold, J. ^{[6
]}

Dalton, T. ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Stanford Univ, Stanford, CA 94305 USA

[3] IBM Corp, Syst & Technol Grp, Hopewell Jct, NY 12533 USA

[4] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[5] Adv Micro Devices Inc, Hopewell Jct, NY 12533 USA

[6] IBM Res Div, Semicond Res & Dev Ctr, Albany, NY 12222 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 11期

关键词：

plasma modification; ion current; porous SiCOH dielectrics; downstream plasmas;

D O I：

10.1016/j.tsf.2007.08.071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A mechanism for the modification of porous ultra low-k (ULK) and extreme ultra low-k (EULK) SiCOH-based materials is proposed. This is achieved by correlating film damage on a patterned structure measured by angular resolved x-ray photoelectron spectroscopy (ARXPS) with corresponding changes in reactive species radical density and ion current in the plasma measured by optical emission spectroscopy (OES), rare gas actinometry, and modeling. Line-to-line electrical leakage and capacitance data of nested line structures exposed to downstream ash plasmas suggest that other etching steps during back-end-of-the-line (BEOL) dual damascene processing are also critical for the overall modification induced to these materials. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：3558 / 3563

页数：6

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