Excimer laser induced patterning of PSZT and PLZT films

被引：0

作者：

Leech, Patrick William ^{[1
]}

Holland, Anthony S. ^{[2
]}

机构：

[1] CSIRO, Clayton, Vic 3168, Australia

[2] RMIT, Sch Elect & Comp Engn, Melbourne, Vic, Australia

来源：

MICROELECTROMECHANICAL SYSTEMS - MATERIALS AND DEVICES | 2008年 / 1052卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The patterning of strontium-doped lead zirconium titanate (PSZT) and lanthanum-doped lead zirconium titanate (PLZT) films has been examined using excimer laser radiation. Both types of film were deposited by rf magnetron sputtering using in-situ heating and a controlled cooling rate in order to obtain the perovskite-oriented phase. The depth of laser ablation in both PSZT and PLZT films showed a logarithmic dependence on fluence. The threshold fluence required to initiate ablation was similar to 1.25 mJ/cm(2) for PLZT and similar to 1.87 mJ/cm(2) for PSZT films. The ablation rate of PLZT films was slightly higher than that of PSZT films over the range of fluence (10-150 J/cm(2)) and increased linearly with number of pulses. The higher ablation rate of PLZT films has been attributed to the finer grain size (160-200 nm) than in the PSZT films (1.0-1.2 mu m).

引用

页码：179 / +

页数：2

共 11 条

[1] Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films [J].