Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks

被引：36

作者：

Kim, Hyonwoong ^{[1
]}

Lim, Wantae ^{[2
]}

Lee, Jae-Hoon ^{[2
]}

Pearton, S. J. ^{[3
]}

Ren, F. ^{[4
]}

Jang, Soohwan ^{[1
,5
]}

机构：

[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[2] Samsung LED, GaN Power Res Grp, Suwon 443743, South Korea

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[5] Dankook Univ, RICT, Yongin 448701, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2012年 / 164卷 / 01期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

AlGaN/GaN HEMT; Platinum nanonetwork; Hydrogen sensor; ELECTRON-MOBILITY TRANSISTORS; ROOM-TEMPERATURE; DRAIN CURRENT; GAN; NANOWIRES; TEMPLATE; NETWORKS;

D O I：

10.1016/j.snb.2012.01.067

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

AlGaN/GaN based diode sensors incorporating platinum nanonetworks for hydrogen sensing were demonstrated. Platinum nanonetworks with 2-3 nm diameter were synthesized by a simple solution phase method, and uniformly deposited on the semiconductor surface by spin-coating. The density of Pt nanonetworks was controlled by the number of the spin coating cycles. Selective-area deposition of the Pt nanonetworks was achieved by the standard photoresist lift-off technique. Compared to conventional Pt thin film diode sensors, the Pt nanonetwork sensor showed remarkably larger current change of 2.3 x 10(7)% at 1 V for 4% H-2 in N-2 exposure, which resulted from the larger effective barrier height reduction due to the increased surface area of the Pt nanonetworks. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：64 / 68

页数：5

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