Low-Frequency Noise Study of p-Channel Bulk MuGFETs

被引：6
|
作者：
Simoen, E. [1 ]
Aoulaiche, M. [1 ]
Collaert, N. [1 ]
Claeys, C. [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 | 2011年 / 39卷 / 01期
关键词：
VOLUME INVERSION; FLICKER NOISE; 1/F NOISE; GATE; IMPACT;
D O I：
10.1149/1.3615176
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The low-frequency (LF) noise in p-channel bulk Multiple-Gate Field-Effect Transistors (MuGFETs) with 2.5 nm SiON gate oxide has been investigated in the ohmic regime from weak to strong inversion. It is shown that both 1/f-like noise and Generation-Recombination (GR) noise are present, giving rise to a wide device-to-device scatter in the spectral density. The 1/f noise is dominated by number fluctuations from which an effective trap density in the range 5x10(17) cm(-3)eV(-1) has been derived. At the same time, it is demonstrated that the GR noise originates from traps in the gate oxide.
引用
收藏
页码：53 / 60
页数：8
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