Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

被引：56

作者：

Zhang, En Xia ^{[1
]}

Newaz, A. K. M. ^{[2
]}

Wang, Bin ^{[2
]}

Bhandaru, Shweta ^{[3
]}

Zhang, C. Xuan ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Bolotin, Kirill I. ^{[2
]}

Pantelides, Sokrates T. ^{[2
]}

Alles, Michael L. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Weiss, Sharon M.

Reed, Robert A. ^{[1
]}

Weller, Robert A. ^{[1
]}

机构：

[1] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Grad Program Mat Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

基金：

美国国家科学基金会;

关键词：

Graphene; Raman spectroscopy; total ionizing dose radiation; SINGLE-LAYER; HYDROGENATION; IRRADIATION; ADSORPTION; RADIATION; OXIDATION; PROTON; DAMAGE;

D O I：

10.1109/TNS.2011.2167519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have evaluated the responses of graphene materials and devices to 10-keV X-ray irradiation and ozone exposure. Large positive shifts are observed in the current-voltage characteristics of graphene-on-SiO2 transistors irradiated under negative gate bias. Moreover, significant radiation-induced increases are found in the resistance of suspended graphene layers; the charge neutral point (CNP) of the graphene layer also shifts positively with increasing total dose. Raman spectroscopy shows that similar defects are generated in graphene-on-SiO2 sheets by 10-keV X-ray irradiation and ozone exposure. First principles calculations of the relevant binding energies, and reaction and diffusion barriers for oxygen on graphene, strongly suggest that oxygen adsorption and reactions, along with the resulting p-type doping, can lead to the observed degradation of irradiated or ozone-exposed graphene materials and devices.

引用

页码：2961 / 2967

页数：7

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