Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi2Ti2O7 high-k gate dielectrics

被引：6

作者：

Cho, Kwang-Hwan ^{[2
]}

Kang, Min-Gyu ^{[1
]}

Jang, Ho Won ^{[1
]}

Shin, Hyun Yong ^{[3
]}

Kang, Chong-Yun ^{[1
]}

Yoon, Seok-Jin ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Elect Mat Res Ctr, Seoul 130650, South Korea

[2] Univ Wisconsin, Dept Mat Sci, Madison, WI 53706 USA

[3] Namseoul Univ, Dept Elect Engn, Cheonan 331707, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 05期

关键词：

OTFT; high-k gate dielectrics; BiTiO; leakage currents; PULSED-LASER DEPOSITION; CHEMICAL SOLUTION DECOMPOSITION; ELECTRICAL-PROPERTIES; STRONTIUM-TITANATE; INSULATORS;

D O I：

10.1002/pssr.201206080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi2Ti2O7 (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 x 10(8) A/cm2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 x 10(4) A/cm2. Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：208 / 210

页数：3

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