Dopant Segregation and Nickel Stanogermanide Contact Formation on p+ Ge0.947Sn0.053 Source/Drain

被引：37

作者：

Han, Genquan ^{[1
]}

Su, Shaojian ^{[2
]}

Zhou, Qian ^{[1
]}

Guo, Pengfei ^{[1
]}

Yang, Yue ^{[1
]}

Zhan, Chunlei ^{[1
]}

Wang, Lanxiang ^{[1
]}

Wang, Wei ^{[1
]}

Wang, Qiming ^{[2
]}

Xue, Chunlai ^{[2
]}

Cheng, Buwen ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 05期

基金：

新加坡国家研究基金会; 中国国家自然科学基金;

关键词：

Contact resistance R-C; dopant segregation (DS); germanium-tin (Ge1-xSnx); Ni(Ge1-xSnx); SCHOTTKY-BARRIER HEIGHT;

D O I：

10.1109/LED.2012.2186430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

P+Ge1-xSnx is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in Ge1-xSnx channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of p(+)Ge(0.947)Sn(0.053) (boron-doped). A study comparing the contact resistance R-C of nickel stanogermanide [Ni(Ge1-xSnx) or Ni(GeSn)] contact on p(+)Ge(1-x)Sn(x) and nickel germanide (NiGe) contact on p(+) Ge was performed. A more pronounced DS effect is achieved during the stanogermanidation in comparison with the NiGe/p(+) Ge control. R-C is 44% lower in the Ni(Ge1-xSnx)/p(+) GeSn structure as compared to the NiGe/p(+) Ge control. The reduced R-C is attributed to a more significant DS effect and the lower bandgap of Ge1-xSnx as compared with Ge.

引用

页码：634 / 636

页数：3

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