Accelerating Sub-Block Erase in 3D NAND Flash Memory

被引:0
|
作者
Gong, Hongbin [1 ]
Shen, Zhirong [1 ]
Shu, Jiwu [1 ,2 ]
机构
[1] Xiamen Univ, Xiamen, Peoples R China
[2] Tsinghua Univ, Beijing, Peoples R China
来源
2021 IEEE 39TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD 2021) | 2021年
关键词
D O I
10.1109/ICCD53106.2021.00045
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
3D flash memory removes scaling limitations of planar flash memory, yet it is still plagued by the tedious GC process due to the "big block problem". In this paper, we propose SpeedupGC, a framework that incorporates the characteristics of data updates into existing sub -block erase designs. The main idea of SpeedupGC is to guide the hotly-updated data to the blocks that are about to be erased, so as to speculatively produce more invalid pages and suppress the relocation overhead. We conduct extensive trace-driven experiments, showing that SpeedupGC can averagely reduce 64.7% of the GC latency, 21.8% of the read latency, 17.7% of the write latency, and 11.5% of the write amplification when compared to state-of-the-art designs.
引用
收藏
页码:228 / 235
页数:8
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