Reverse leakage current calculations for SiC Schottky contacts

Reverse leakage current calculations as a function of Schottky barrier height and temperature have been performed for metal gates on n-type 6H-SiC. These calculations were performed using a WKB evaluation of the tunneling probability through a reverse biased Schottky barrier and numerically integrating over all energies to find the reverse current density. This method is shown to yield much better agreement with previously published reverse leakage currents on 6H-SiC than can be obtained using thermionic emission theory.