Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films

被引:74
|
作者
Mohamed, J. Raj [1 ,2 ]
Amalraj, L. [1 ]
机构
[1] VHNSN Coll, PG & Res Dept Phys, Virudunagar 626001, Tamil Nadu, India
[2] HH Rajahs Coll, PG & Res Dept Phys, Pudukkottai 622001, Tamil Nadu, India
来源
JOURNAL OF ASIAN CERAMIC SOCIETIES | 2016年 / 4卷 / 03期
关键词
In2S3; Resistivity; Band gap; Urbach; Crystallite size; CHEMICAL BATH DEPOSITION; THICKNESS-DEPENDENT PROPERTIES; PYROLYSIS NSP TECHNIQUE; SOLAR-CELLS; BUFFER LAYERS; OPTOELECTRONIC PROPERTIES; SUBSTRATE-TEMPERATURE; DOPING CONCENTRATION; OPTICAL-PROPERTIES; IN2O3; FILMS;
D O I
10.1016/j.jascer.2016.07.002
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The present work investigates the effect of precursor concentration (m(c)) on the structural, optical, morphological and electrical conductivity properties of In2S3 thin films grown on amorphous glass substrates by nebulized spray pyrolysis (NSP) technique. The mixed phase of cubic and tetragonal structure of In2S3 thin films at higher concentration has been observed by X-ray diffraction pattern. The reduced strain by increasing the precursor concentration increased the average crystallite from 17.8 to 28.9 nm. The energy dispersive analysis by X-ray (EDAX) studies confirmed the presence of In and S. The transmittance, optical direct band gap energy, Urbach energy and skin depth of In2S3 films have been analyzed by optical absorption spectra. The better conductivity and mobility noticed at m(c) = 0.15 M are explained by carrier concentration and crystallite. Better optical and electrical conductivity behaviour of In2S3 thin film sample proposes for effective solar cell fabrication. (C) 2016 The Ceramic Society of Japan and the Korean Ceramic Society. Production and hosting by Elsevier B.V.
引用
收藏
页码:357 / 366
页数:10
相关论文
共 50 条
  • [1] Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films
    Anitha, N.
    Anitha, M.
    Mohamed, J. Raj
    Valanarasu, S.
    Amalraj, L.
    JOURNAL OF ASIAN CERAMIC SOCIETIES, 2018, 6 (02): : 121 - 131
  • [2] Effect of substrate temperature on nebulized spray pyrolysised In2S3 thin films
    Mohamed, J. Raj
    Sanjeeviraja, C.
    Amalraj, L.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (05) : 4437 - 4446
  • [3] Effect of substrate temperature on nebulized spray pyrolysised In2S3 thin films
    J. Raj Mohamed
    C. Sanjeeviraja
    L. Amalraj
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 4437 - 4446
  • [4] Photoluminescence in Spray Pyrolysis Deposited β-In2S3 Thin Films
    R. Jayakrishnan
    Journal of Electronic Materials, 2018, 47 : 2249 - 2256
  • [5] Photoluminescence in Spray Pyrolysis Deposited β-In2S3 Thin Films
    Jayakrishnan, R.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (04) : 2249 - 2256
  • [6] Optimised In2S3 Thin Films Deposited by Spray Pyrolysis
    Spasevska, Hristina
    Kitts, Catherine C.
    Ancora, Cosimo
    Ruani, Giampiero
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2012, 2012
  • [7] Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique
    M. Kraini
    N. Bouguila
    N. Moutia
    J. El Ghoul
    K. Khirouni
    C. Vázquez-Vázquez
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 1888 - 1906
  • [8] Properties of nickel doped In2S3 thin films deposited by spray pyrolysis technique
    Kraini, M.
    Bouguila, N.
    Moutia, N.
    El Ghoul, J.
    Khirouni, K.
    Vazquez-Vazquez, C.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (03) : 1888 - 1906
  • [9] Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films
    Srivind, J.
    Nagarethinam, V. S.
    Balu, A. R.
    MATERIALS SCIENCE-POLAND, 2016, 34 (02): : 393 - 398
  • [10] Influence of precursor concentration on the properties of spray deposited CdO thin films
    Helen, S. J.
    Devadason, Suganthi
    Mahalingam, T.
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665