Silicon as a virtual plasmonic material: Acquisition of its transient optical constants and the ultrafast surface plasmon-polariton excitation

被引:32
作者
Danilov, P. A. [1 ,2 ]
Ionin, A. A. [1 ]
Kudryashov, S. I. [1 ,2 ]
Makarov, S. V. [1 ]
Rudenko, A. A. [1 ]
Saltuganov, P. N. [3 ]
Seleznev, L. V. [1 ]
Yurovskikh, V. I. [1 ,2 ]
Zayarny, D. A. [1 ]
Apostolova, T. [4 ]
机构
[1] Lebedev Phys Inst, Moscow 119991, Russia
[2] Natl Res Nucl Univ MEPhl, Moscow Engn Phys Inst, Moscow 115409, Russia
[3] Moscow Inst Phys & Technol, Moscow 141700, Russia
[4] Bulgarian Acad Sci, Inst Nucl Res & Nucl Energet, Sofia 1784, Bulgaria
基金
俄罗斯基础研究基金会;
关键词
FEMTOSECOND LASER-PULSES; AUGER-RECOMBINATION; GAP SEMICONDUCTORS; DYNAMICS; ELECTRON; ABLATION; SI; SPECTROSCOPY; IRRADIATION; RELAXATION;
D O I
10.1134/S1063776115050118
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ultrafast intense photoexcitation of a silicon surface is complementarily studied experimentally and theoretically, with its prompt optical dielectric function obtained by means of time-resolved optical reflection microscopy and the underlying electron-hole plasma dynamics modeled numerically, using a quantum kinetic approach. The corresponding transient surface plasmon-polariton (SPP) dispersion curves of the photo-excited material were simulated as a function of the electron-hole plasma density, using the derived optical dielectric function model, and directly mapped at several laser photon energies, measuring spatial periods of the corresponding SPP-mediated surface relief nanogratings. The unusual spectral dynamics of the surface plasmon resonance, initially increasing with the increase in the electron-hole plasma density but damped at high interband absorption losses induced by the high-density electron-hole plasma through instantaneous bandgap renormalization, was envisioned through the multi-color mapping.
引用
收藏
页码:946 / 959
页数:14
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