THz emission from semiconductor surfaces

被引：66

作者：

Malevich, Vitalij L. ^{[2
]}

Adomavicius, Ramunas ^{[1
]}

Krotkus, Arunas ^{[1
,3
]}

机构：

[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania

[2] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS

[3] Vilnius State Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania

来源：

COMPTES RENDUS PHYSIQUE | 2008年 / 9卷 / 02期

关键词：

terahertz emission; photo-Dember effect; electric field induced optical rectification;

D O I：

10.1016/j.crhy.2007.09.014

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge.

引用

页码：130 / 141

页数：12

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