Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

被引：6

作者：

Huang, Yifei ^{[1
]}

Wang, Ying ^{[1
]}

Kuang, Xiaofei ^{[1
]}

Wang, Wenju ^{[1
]}

Tang, Jianxiang ^{[1
]}

Sun, Youlei ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Zhejiang, Peoples R China

来源：

MICROMACHINES | 2018年 / 9卷 / 12期

基金：

中国国家自然科学基金;

关键词：

edge termination; silicon carbide (SiC); junction termination extension (JTE); breakdown voltage (BV); JUNCTION TERMINATION; EDGE TERMINATION; DESIGN; SIMULATION; STABILITY;

D O I：

10.3390/mi9120610

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-m thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 x 10(12) cm(-2) to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 x 10(12) cm(-2) to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

引用

页数：9

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