Graded AlGaN/AlGaN Superlattice Insert Layer Improved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

被引：25

作者：

Wang, Shanlin ^{[1
]}

Yin, Yi An ^{[1
]}

Gu, Huaimin ^{[1
]}

Wang, Naiyin ^{[1
]}

Liu, Li ^{[1
]}

机构：

[1] South China Normal Univ, Lab Nanophoton Funct Mat & Devices, Guangdong Engn Res Ctr Optoelect Funct Mat & Devi, Inst Optoelect Mat & Technol, Guangzhou 510000, Guangdong, Peoples R China

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2016年 / 12卷 / 10期

关键词：

AlGaN/AlGaN superlattice; hole reserving layer; ultraviolet light-emitting diodes (UV-LEDs); MACROSCOPIC POLARIZATION; HOLE-INJECTION; HETEROSTRUCTURES; EFFICIENCY;

D O I：

10.1109/JDT.2016.2583438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al composition graded superlattice AlGaN/AlGaN layer was adopted in AlGaN-based deep ultraviolet light-emitting diodes as a hole reserving layer and relieved the strain between the last quantum barrier and the AlGaN electron blocking layer. The simulation shows that the light output power and internal quantum efficiency of the newly structure are higher and the efficiency droop decreases from 43.6% to 28.8%, due to which the inserted layer weakened the polarization field in the MQWs, suppressed the electron leakage, and increased the hole injection efficiency.

引用

页码：1112 / 1116

页数：5

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