Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculations

被引：13
作者：
Kawasaki, T [1 ]
Katayama-Yoshida, H [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Ibaraki, Osaka 5670047, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 302卷
关键词：
boron; silicon; valence control; first-principles calculation;
D O I：
10.1016/S0921-4526(01)00422-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We propose the co-doping method for the fabrication of p-type Si as low-resistive as metals. This method is the doping method in which two sorts of element are doped into host crystal simultaneously. The optimal configurations for B/Ge, B/P in Si were studied by the first-principles calculation. It was found that an energy gain is obtained as Ge or P atoms are placed nearby a B atom. This result indicates that the solubility limit of B increases. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：163 / 165
页数：3
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