Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculations

被引：13

作者：

Kawasaki, T ^{[1
]}

Katayama-Yoshida, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Dept Condensed Matter Phys, Ibaraki, Osaka 5670047, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 302卷

关键词：

boron; silicon; valence control; first-principles calculation;

D O I：

10.1016/S0921-4526(01)00422-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose the co-doping method for the fabrication of p-type Si as low-resistive as metals. This method is the doping method in which two sorts of element are doped into host crystal simultaneously. The optimal configurations for B/Ge, B/P in Si were studied by the first-principles calculation. It was found that an energy gain is obtained as Ge or P atoms are placed nearby a B atom. This result indicates that the solubility limit of B increases. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 165

页数：3

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