Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

被引：3
|
作者：
Altmannshofer, Stephan [1 ,2 ]
Miller, Bastian [3 ,4 ]
Holleitner, Alexander W. [3 ,4 ]
Boudaden, Jamila [1 ]
Eisele, Ignaz [1 ,2 ]
Kutter, Christoph [1 ,2 ]
机构：
[1] Fraunhofer Res Inst Microsyst & Solid State Techn, D-80686 Munich, Germany
[2] Univ Bundeswehr Munchen, Inst Phys, Fac Elect Engn & Informat Technol, D-85579 Neubiberg, Germany
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[4] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
来源：
THIN SOLID FILMS | 2018年 / 645卷
关键词：
Plasma enhanced chemical vapor deposition; Microwave plasma; mu c-Silicon; Spectroscopic ellipsometry; FREQUENCY-GLOW DISCHARGE; C-SI-H; MICROCRYSTALLINE SILICON; THIN-FILMS; HYDROGEN; TEMPERATURE; PRESSURE; DILUTION;
D O I：
10.1016/j.tsf.2017.10.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.
引用
收藏
页码：180 / 186
页数：7
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