Deposition of micro crystalline silicon films using microwave plasma enhanced chemical vapor deposition

被引：3
|
作者：
Altmannshofer, Stephan [1 ,2 ]
Miller, Bastian [3 ,4 ]
Holleitner, Alexander W. [3 ,4 ]
Boudaden, Jamila [1 ]
Eisele, Ignaz [1 ,2 ]
Kutter, Christoph [1 ,2 ]
机构：
[1] Fraunhofer Res Inst Microsyst & Solid State Techn, D-80686 Munich, Germany
[2] Univ Bundeswehr Munchen, Inst Phys, Fac Elect Engn & Informat Technol, D-85579 Neubiberg, Germany
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[4] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
来源：
THIN SOLID FILMS | 2018年 / 645卷
关键词：
Plasma enhanced chemical vapor deposition; Microwave plasma; mu c-Silicon; Spectroscopic ellipsometry; FREQUENCY-GLOW DISCHARGE; C-SI-H; MICROCRYSTALLINE SILICON; THIN-FILMS; HYDROGEN; TEMPERATURE; PRESSURE; DILUTION;
D O I：
10.1016/j.tsf.2017.10.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A microwave plasma enhanced chemical vapor deposition (microwave PECVD) process has been investigated to deposit micro crystalline silicon films with a high growth rate from silane (SiH4). A three-layer Bruggeman-Effective-Medium-Approximation (BEMA) model was developed to describe the complex structure of the grown films. The model was confirmed by Raman and spectroscopic ellipsometry measurements. In addition the surface evolution was characterized by AFM (Atomic Force Microscopy) and spectroscopic ellipsometry data. Particular emphasis is given to the correlation between the structural film properties and the deposition parameters. Besides chemical reactions, it is shown that ion bombardment plays an important role for the crystallinity of the grown silicon films. In the presence of ions, hydrogen radicals are able to etch silicon, which significantly improves the crystallinity of the deposited films. If just radicals are present, the deposited films become amorphous.
引用
收藏
页码：180 / 186
页数：7
相关论文
共 50 条
  • [31] Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor
    Remolina, A.
    Monroy, B. M.
    Garcia-Sanchez, M. F.
    Ponce, A.
    Bizarro, M.
    Alonso, J. C.
    Ortiz, A.
    Santana, G.
    NANOTECHNOLOGY, 2009, 20 (24)
  • [32] Mass spectroscopy in plasma-enhanced chemical vapor deposition of silicon-oxide films using tetramethoxysilane
    Inoue, Y
    Takai, O
    THIN SOLID FILMS, 1998, 316 (1-2) : 79 - 84
  • [33] Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition
    Sanchez, G.
    Wu, A.
    Tristant, P.
    Tixier, C.
    Soulestin, B.
    Desmaison, J.
    Alles, A. Bologna
    THIN SOLID FILMS, 2008, 516 (15) : 4868 - 4875
  • [34] Influence of Argon Flow on Deposition of Hydrogenated Nanocrystalline Silicon (nc-Si:H) Films by Plasma Chemical Vapor Deposition
    Funde, A. M.
    Bakr, N. A.
    Salve, T. S.
    Diwate, K. D.
    Kamble, D. K.
    Hawaldar, R. R.
    Amalnerkar, D. P.
    Jadkar, S. R.
    JOURNAL OF NANO RESEARCH, 2009, 5 : 185 - 191
  • [35] Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As
    Shi, Ming
    Tang, Hengjing
    Shao, Xiumei
    Huang, Xing
    Cao, Gaoqi
    Wang, Rui
    Li, Tao
    Li, Xue
    Gong, Haimei
    INFRARED PHYSICS & TECHNOLOGY, 2015, 71 : 384 - 388
  • [36] Formation of microcrystalline silicon film by using plasma-enhanced chemical vapor deposition
    Lee, JY
    Yoon, JH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (02) : 423 - 426
  • [37] Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride
    Sennikov, P. G.
    Golubev, S. V.
    Shashkin, V. I.
    Pryakhin, D. A.
    Drozdov, M. N.
    Andreev, B. A.
    Drozdov, Yu. N.
    Kuznetsov, A. S.
    Pohl, H. -J.
    SEMICONDUCTORS, 2009, 43 (07) : 968 - 972
  • [38] Morphology and micro-structural studies of distinct silicon thin films deposited using very high frequency plasma enhanced chemical vapor deposition process
    Juneja, Sucheta
    Sudhakar, S.
    Srivastava, A. K.
    Kumar, Sushil
    THIN SOLID FILMS, 2016, 619 : 273 - 280
  • [39] Effect of substrate bias on the plasma enhanced chemical vapor deposition of microcrystalline silicon thin films
    Zhang, X. D.
    Zhang, F. R.
    Amanatides, E.
    Mataras, D.
    Zhao, Y.
    THIN SOLID FILMS, 2008, 516 (20) : 6912 - 6918
  • [40] Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition
    Ding Yan-Li
    Zhu Zhi-Li
    Gu Jin-Hua
    Shi Xin-Wei
    Yang Shi-E
    Gao Xiao-Yong
    Chen Yong-Sheng
    Lu Jing-Xiao
    ACTA PHYSICA SINICA, 2010, 59 (02) : 1190 - 1195
12345