X-ray mask replication using a Suss stepper at CXrL

被引:0
作者
Leonard, Q
Wallace, J
Vladimirsky, O
Vladimirsky, Y
Simon, K
Cerrina, F
机构
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES | 1997年 / 3048卷
关键词
x-ray lithography; x-ray mask; mask replication; x-ray steppers;
D O I
10.1117/12.275790
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Crucial to any viable lithographic mask technology is the requirement that a given mask pattern be usable for the hundreds of thousands of exposures in a production environment. In a conventional approach this would be accomplished by making robust masks. A better strategy to ensure the longevity of the pattern itself, is realized by producing many defect-free copies of master masks. This approach is especially important in the case of x-ray masks, although the optical masks also have a limited usable lifetime. X-ray mask generation is accomplished today via. e-beam lithography, which as a replication method has several inherent disadvantages, including low speed and high cost. X-ray replication is the best solution. In this paper, we describe the development of a mask replication method realized on a Suss X-ray stepper. The approach is based on supporting parent mask and the daughter blank in fully kinematic fixtures during replication, ensuring a minimum of distortion, excellent gap control and optimized exposure conditions. Minor modifications of the mask mounting fixtures, the replication setup, and details of processing are presented. Preliminary results of mask replication are also shown.
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页码:299 / 303
页数:5
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