Electronic properties of graphene-based bilayer systems

被引：362

作者：

Rozhkov, A. V. ^{[1
,2
,3
]}

Sboychakov, A. O. ^{[1
,2
]}

Rakhmanov, A. L. ^{[1
,2
,3
,4
]}

Nori, Franco ^{[1
,5
]}

机构：

[1] RIKEN, CEMS, Saitama 3510198, Japan

[2] Russian Acad Sci, Inst Theoret & Appl Electrodynam, Moscow 125412, Russia

[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[4] All Russia Res Inst Automat, Moscow 127055, Russia

[5] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS | 2016年 / 648卷

关键词：

VAN-HOVE SINGULARITIES; FIELD-EFFECT TRANSISTORS; BROKEN-SYMMETRY STATES; DOUBLE-LAYER GRAPHENE; P-N-JUNCTIONS; DIRAC-FERMIONS; LANDAU-LEVELS; MAGNETIC-FIELD; OPTICAL CONDUCTIVITY; BALLISTIC TRANSPORT;

D O I：

10.1016/j.physrep.2016.07.003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers single-electron properties, effects of static electric and magnetic fields, bilayer-based mesoscopic systems, spin orbit coupling, dc transport and optical response, as well as spontaneous symmetry violation and other interaction effects. The selection of the material aims to introduce the reader to the most commonly studied topics of theoretical and experimental research in bilayer graphene. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：1 / 104

页数：104

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