Numerical simulation of secondary electron emission charging at insulator surfaces
被引:0
作者:
Niessen, EMJ
论文数: 0引用数: 0
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机构:
Philips Res Labs, Nat Lab, NL-5656 AA Eindhoven, NetherlandsPhilips Res Labs, Nat Lab, NL-5656 AA Eindhoven, Netherlands
Niessen, EMJ
[1
]
机构:
[1] Philips Res Labs, Nat Lab, NL-5656 AA Eindhoven, Netherlands
来源:
ISDEIV: XVIIITH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM - PROCEEDINGS, VOLS 1 AND 2
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1998年
/
18卷
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The charging process of insulator surfaces in vacuum at high voltages due to secondary electron emission has been calculated using the numerical simulation package SELOP. The systems considered consist of two electrodes at a high-voltage difference, separated by a glass plate or a hollow glass channel. The simulations give insight into the critical high-voltage positions and into the influence of the geometry, the initial voltage distribution and the material properties on the charging profiles and the leakage current paths. A high-voltage quality increase of these systems can be obtained by decreasing the number of impacts of free electrons, adding a coating at all insulating surfaces which has a high value of E-I (i.e. the first crossover point of the secondary electron yield curve) and/or is weakly conductive, and breaking up the total voltage difference in smaller parts by adding electrodes to all surfaces at intermediate voltages.