Temperature dependence of carrier relaxation in strain-induced quantum dots

被引：62

作者：

Braskén, M ^{[1
]}

Lindberg, M

Sopanen, M

Lipsanen, H

Tulkki, J

机构：

[1] Abo Akad Univ, Dept Phys, FIN-20520 Turku, Finland

[2] Helsinki Univ Technol, Optoelect Labs, FIN-02015 Espoo, Finland

[3] Helsinki Univ Technol, Lab Computat Engn, FIN-02015 Espoo, Finland

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.58.R15993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report experimental observation and theoretical interpretation of temperature-dependent, time-resolved luminescence from strain-induced quantum dots. The experimental results are well described by a master equation model for the electrons. The intraband relaxation in the conduction band and the radiative recombination rate are governed by the hole populations resulting in prominent temperature dependence of the relaxation process. Even when only a few electrons and holes are confined in a single quantum dot the Auger-like process provides a rapid intraband relaxation channel for electrons that can replace the phonon scattering as the dominant relaxation mechanism. [S0163-1829(98)51148-4].

引用

页码：15993 / 15996

页数：4

共 23 条

[1] Temperature independent lifetime in InAlAs quantum dots [J].

Arlett, J ;

Yang, F ;

Hinzer, K ;

Fafard, S ;

Feng, Y ;

Charbonneau, S ;

Leon, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :578-581

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[3] ELECTRON RELAXATION IN QUANTUM DOTS BY MEANS OF AUGER PROCESSES [J].

BOCKELMANN, U ;

EGELER, T .

PHYSICAL REVIEW B, 1992, 46 (23) :15574-15577

[4] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

[5]

Brasken M, 1997, PHYS STATUS SOLIDI A, V164, P427, DOI 10.1002/1521-396X(199711)164:1<427::AID-PSSA427>3.0.CO

[6]

2-P

[7]

EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2

[8] Temperature effects on the radiative recombination in self-assembled quantum dots [J].

Fafard, S ;

Raymond, S ;

Wang, G ;

Leon, R ;

Leonard, D ;

Charbonneau, S ;

Merz, JL ;

Petroff, PM ;

Bowers, JE .

SURFACE SCIENCE, 1996, 361 (1-3) :778-782

[9] Slow relaxation of excited states in strain-induced quantum dots [J].

Gfroerer, TH ;

Sturge, MD ;

Kash, K ;

Yater, JA ;

Plaut, AS ;

Lin, PSD ;

Florez, LT ;

Harbison, JP ;

Das, SR ;

Lebrun, L .

PHYSICAL REVIEW B, 1996, 53 (24) :16474-16480

[10] Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects [J].

Grosse, S ;

Sandmann, JHH ;

vonPlessen, G ;

Feldmann, J ;

Lipsanen, H ;

Sopanen, M ;

Tulkki, J ;

Ahopelto, J .

PHYSICAL REVIEW B, 1997, 55 (07) :4473-4476

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