Optical Properties of Monocrystalline Silicon Nanowires

被引:3
|
作者
Gentsar, P. O. [1 ]
Stronski, A., V [1 ]
Karachevtseva, L. A. [1 ]
Onyshchenko, V. F. [1 ]
机构
[1] Natl Acad Sci Ukraine, V Ye Lashkaryov Inst Semicond Phys, Kiev, Ukraine
来源
PHYSICS AND CHEMISTRY OF SOLID STATE | 2021年 / 22卷 / 03期
关键词
porous silicon p-Si (100); silicon nanowires; reflection spectra; transmission spectra; absorption spectra; quantum size effect; MACROPOROUS SILICON; PHOTOCONDUCTIVITY;
D O I
10.15330/pcss.22.3.453-459
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 divided by 1.7 mu m. The layers of nanowires had a thickness of 5.5 mu m, 20 mu m, 50 mu m and a porosity of 60 %. The porous silicon layers had a thickness of 5 mu m, 50 mu m and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.
引用
收藏
页码:453 / 459
页数:7
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