Silicon crystal morphologies during solidification refining from Al-Si melts

被引:23
作者
Ullah, Mohammad W. [1 ]
Carlberg, Torbjoern [1 ]
机构
[1] Mid Sweden Univ, FSCN, S-85170 Sundsvall, Sweden
关键词
Crystal morphology; Solidification; Bridgman technique; Semiconducting silicon; Solar cells; ALLOYS; GROWTH;
D O I
10.1016/j.jcrysgro.2010.10.084
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
To obtain a sound basis for further development of a refining process in which Si is precipitated from aluminium melts, a series of experiments have been performed in a Bridgman furnace. Compositions studied are in the range of 17-38% Si, and experiments have been carried out with the hot zone up and with the hot zone down to study the effects of flotation and sedimentation as well as those of different convection conditions on silicon precipitation. The similarity in density between liquid aluminium and silicon crystals implies that the melt convection is important for the possible separation of the crystals in a gravity field, but the crystal morphologies also have to be controlled to avoid aluminum inclusions. At lower silicon contents the silicon morphologies have a fish-bone or star-like shape but as the Si content increases the morphology changes to a plate-like structure, which becomes coarser with increasing Si concentration. The growth pattern for coarse plates growing as (1 1 1) platelets tend to form pockets of aluminium, which will end up as inclusions during dissolution of the matrix. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:212 / 218
页数:7
相关论文
共 14 条
[11]   Growth of octahedral primary silicon in cast hypereutectic Al-Si alloys [J].
Xu, C. L. ;
Wang, H. Y. ;
Liu, C. ;
Jiang, Q. C. .
JOURNAL OF CRYSTAL GROWTH, 2006, 291 (02) :540-547
[12]   Boron removal by titanium addition in solidification refining of silicon with Si-Al melt [J].
Yoshikawa, T ;
Arimura, K ;
Morita, K .
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 2005, 36 (06) :837-842
[13]   Removal of phosphorus by the solidification refining with Si-Al melts [J].
Yoshikawa, Takeshi ;
Morita, Kazuki .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2003, 4 (06) :531-537
[14]   Refining of silicon during its solidification from a Si-Al melt [J].
Yoshikawa, Takeshi ;
Morita, Kazuki .
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) :776-779