Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition

Silicon-delta-doped In0.49Ga0.51P layers were grown at 560 degrees C, 640 degrees C, and 720 degrees C by low pressure metalorganic chemical vapor deposition. For the growth temperature 560 degrees C, the electron sheet concentration saturated at 5.9 x 10(12) cm(-2), which corresponds to a three-dimensional (3D) concentration of 1.5 x 10(19) cm(-3). The sheet concentration increases by factor 3.5 and even by factor 11 for growth temperatures 640 degrees C and 720 degrees C, respectively. The widths of doping profiles were less than 6 nm, indicating a strong carrier confinement in the V-shaped quantum well. Electron mobility in samples grown at 560 degrees C indicates the presence of acceptor impurities at a high density. In InGaP grown at 640 degrees C, compensation effects Of background accepters do not occur resulting in extremely sharp profiles with a full width at half-maximum of 1.9 nm and a peak concentration of 2.1 x 10(19) cm(-3). The highest electron sheet concentrations were obtained in samples grown at 720 degrees C. (C) 1996 American Institute of Physics.