Charge carrier velocity distributions in field-effect transistors

The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributions in solution-processed zinc-tin oxide thin-film transistors. Two distinct transport pathways, each with a different activation energy, have been observed, in contrast to a single activation energy yielded by steady-state measurements. Our results show that more insight into charge transport behavior and phenomena can be obtained with such time-resolved transport measurements. (C) 2011 American Institute of Physics. [doi:10.1063/1.3558910]