Far-field pattern simulation of flip-chip bonded power light-emitting diodes by a Monte Carlo photon-tracing method

被引:14
作者
Hu, F [1 ]
Qian, KY
Luo, Y
机构
[1] Tsing Hua Univ, Semicond Lighting Lab, Grad Sch Shenzhen, Shenzhen 518055, Peoples R China
[2] Tsinghua Univ, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
关键词
D O I
10.1364/AO.44.002768
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The far-field pattern of light-emitting diodes (LEDs) is an important issue in practical applications. We used a Monte Carlo photon-tracing method for the package design of flip-chip bonded power LEDs. As a first-order approximation, we propose using a plane light source model to calculate the far-field pattern of encapsulated LEDs. The far-field pattern is also studied by use of a more detailed model, which takes the structure of all epitaxial layers of a flip-chip bonded power LED into consideration. By comparing the simulation results with the experimental data, we have concluded that the plane light source model is much less time-consuming and offers fairly good precision for package design. (c) 2005 Optical Society of America.
引用
收藏
页码:2768 / 2771
页数:4
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