A DC-20 GHz Integrated Linear Photonic Receiver in a 0.25 μm BiCMOS SiGe:C Technology

被引：0

作者：

Koryakovtsev, Artyom S. ^{[1
]}

Kokolov, Andrey A. ^{[1
]}

Konkin, Dmitry A. ^{[1
]}

Sheyerman, Feodor I. ^{[1
]}

Babak, Leonid I. ^{[1
]}

机构：

[1] TUSUR, LICS, Tomsk, Russia

来源：

2019 DYNAMICS OF SYSTEMS, MECHANISMS AND MACHINES (DYNAMICS) | 2019年

关键词：

microwave photonic; transimpedance amplifier; integrated photonic receiver; SiGe BiCMOS; AMPLIFIER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and experimental research of linear integrated photonic receiver for 25 Gb/s links is presented. The receiver consists of transimpedance amplifier (TIA), Ge-photodiode (PD) and passive optical structures that integrated on the same silicon substrate using 0.25 mu m BiCMOS SiGe:C technology process. Measured optical-electrical (O/E) 3 dB analog bandwidth of the integrated receiver is 22 GHz, output matching is better than -15 dB up to 30 GHz, which makes receiver suitable for 25 Gb/s links with BPSK modulation. Different bandwidth-increasing techniques are used in the design such as the capacitive emitter degeneration circuit and impedance matching. For saving the die area, TIA was designed without inductor peaking technique. The receiver operates at 1.55 um wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power and occupies an area of 1.46x0.85 mm(2) (0.3x0.4 mm(2) without pads).

引用

页数：4

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