Sintering Process Dependent Dielectric Properties of [Ta2O5]1-x-[TiO2]x, for the Compositions Near x=0.08

被引：4

作者：

Bhandari, Aradhana ^{[1
]}

Kandari, Alok S. ^{[1
]}

Agarwal, M. K. ^{[2
]}

Lingwal, Vijendra ^{[3
]}

Panwar, N. S. ^{[1
]}

机构：

[1] HNB Garhwal Univ, Univ Sci Instrumentat Ctr, Srinagar 246174, Garhwal, India

[2] HNB Garhwal Univ, GB Pant Engn Coll, Srinagar 246174, Garhwal, India

[3] HNB Garhwal Univ, Govt Degree Coll, Srinagar 246174, Garhwal, India

来源：

FERROELECTRICS LETTERS SECTION | 2010年 / 37卷 / 03期

关键词：

Solid state reaction; dielectric constant; loss tangent; dielectric conductivity; HIGH-TEMPERATURE STRUCTURE; TANTALUM-PENTOXIDE; ANNEALING CONDITIONS; CRYSTAL-STRUCTURE; OXIDE ADDITIONS; TA2O5; FILMS; SYSTEM; SILICON; FORM; POLYMORPHISM;

D O I：

10.1080/07315171.2010.519985

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pellet samples of [Ta2O5]1-x-[TiO2]x, (x = 0.078, 0.080, 0.082 and 0.085) were prepared by solid state reaction method. The X-ray diffraction patterns and dielectric constant measurements show the occurrence of low-, mixed- and high-phases with varying sintering processes. The enhanced dielectric constant may be associated with the appearance of monoclinic H-phase. In all the three phases dielectric constant was observed maximum for the composition with x = 0.080, among the prepared compositions. For the Ti modulated Ta2O5 structure the lowest value of the active mode frequency may be held responsible for the observed highest value of dielectric constant for the composition with x = 0.080.

引用

页码：43 / 54

页数：12

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