Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

被引：0

作者：

Tan, CL ^{[1
]}

Wang, H ^{[1
]}

Radhakrishnan, K ^{[1
]}

Cheong, WC ^{[1
]}

Bu, J ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interface/surface states creation during device fabrication and device operation such as HC injection has been recognized as a major reliability issue in InPbased submicron HEMTs. It has been observed that the fabrication process or hot carriers have a marked influence on the dc and rf performance of InAlAs/InGaAs devices and have been comprehensively investigated [1-3]. It is generally accepted that the performance degradation is due mainly to the interface/surface states generation and recombination. Despite this, the fundamental understanding of the interface/surface state properties such as the trap energy level and time constant are still lacking. In this work, a simple technique based on the measurement of the transient drain current is demonstrated for quickly assessing the properties of the HC-induced traps. Two different kinds of interface traps with distinctive time constants have been measured in our present devices.

引用

页码：213 / 214

页数：2