A 27 GHz Adaptive Bias Variable Gain Power Amplifier and T/R Switch in 22nm FD-SOI CMOS for 5G Antenna Arrays

被引：15

作者：

Elgaard, Christian ^{[1
,2
]}

Andersson, Stefan ^{[1
]}

Caputa, Peter ^{[1
]}

Westesson, Eric ^{[1
]}

Sjoland, Henrik ^{[1
,2
]}

机构：

[1] Ericsson, Lund, Sweden

[2] Lund Univ, Lund, Sweden

来源：

2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2019年

关键词：

power amplifier; adaptive bias; T/R-switch; millimeter wave integrated circuits;

D O I：

10.1109/rfic.2019.8701819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA uses adaptive bias, tracking the input signal amplitude, which improves saturated output power (P-sat) with 1.4 dB and 1 dB output compression (OP1dB) by 3 dB. For a supply voltage of 1.2V, the PA reaches a P-sat of 17.4dBm and an OP1dB of 16.5 dBm, with a power added efficiency of 19.5 % and 17.3 %, respectively. The power gain can be controlled with 5-bits from 5.2 to 34 dB. The T/R-switch has an insertion loss of 1.63/1.46 dB in TX/RX mode, and for reliability reasons all switch devices are on in TX-mode. The complete PA and T/R-switch only occupies 0.146 mm(2) in a 22nm FD-SOI CMOS technology.

引用

页码：303 / 306

页数：4

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[5]

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[6]

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